Conductivity switching effect in MIS structures with silicon-based insulators, fabricated by low-frequency plasma-enhanced chemical vapor deposition methods

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 47; no. 5; pp. 641 - 646
• Main Authors: Berdnikov, A. E., Gusev, V. N., Mironenko, A. A., Popov, A. A., Perminov, A. V., Rudy, A. C., Chernomordick, V. D.
• Format: Journal Article
• Language: English
• Published: Dordrecht SP MAIK Nauka/Interperiodica 01.05.2013; Springer
• Subjects: Analysis; Chemical vapor deposition; Electric properties; Low-Dimensional Systems; Magnetic Materials; Magnetism; Methods; Physics; Physics and Astronomy; Quantum Phenomena; Semiconductor Structures; Semiconductors; Silicon; Silicon Nitride; Phase Change Random Access Memory; Silicon Nitride Layer; Double Barrier; Silicon Excess

The current-voltage characteristics of MIS (metal-insulator-semiconductor) structures with insulators based on silicon oxide, fabricated by low-frequency (55 kHz) plasma-enhanced chemical vapor deposition are studied. A specific feature of the used insulators is that there are inclusions of particle...