Conductivity switching effect in MIS structures with silicon-based insulators, fabricated by low-frequency plasma-enhanced chemical vapor deposition methods

The current-voltage characteristics of MIS (metal-insulator-semiconductor) structures with insulators based on silicon oxide, fabricated by low-frequency (55 kHz) plasma-enhanced chemical vapor deposition are studied. A specific feature of the used insulators is that there are inclusions of particle...

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Bibliographic Details
Published inSemiconductors (Woodbury, N.Y.) Vol. 47; no. 5; pp. 641 - 646
Main Authors Berdnikov, A. E., Gusev, V. N., Mironenko, A. A., Popov, A. A., Perminov, A. V., Rudy, A. C., Chernomordick, V. D.
Format Journal Article
LanguageEnglish
Published Dordrecht SP MAIK Nauka/Interperiodica 01.05.2013
Springer
Subjects
Analysis
Chemical vapor deposition
Electric properties
Low-Dimensional Systems
Magnetic Materials
Magnetism
Methods
Physics
Physics and Astronomy
Quantum Phenomena
Semiconductor Structures
Semiconductors
Silicon
Silicon Nitride
Phase Change Random Access Memory
Silicon Nitride Layer
Double Barrier
Silicon Excess
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Summary:The current-voltage characteristics of MIS (metal-insulator-semiconductor) structures with insulators based on silicon oxide, fabricated by low-frequency (55 kHz) plasma-enhanced chemical vapor deposition are studied. A specific feature of the used insulators is that there are inclusions of particles of other materials with narrower band gaps present. It is found that such structures possess the property of bipolar conductivity switching. The MIS structures with a multilayer insulator containing additional nanoscale siliconnitride layers exhibit the best characteristics of the conductivity switching effect.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782613050072