Hydrogen passivation of self-assembled Ge/Si quantum dots

We studied the effect of hydrogen plasma treatment on room-temperature photoluminescence of self-assembled Ge/Si quantum dots by varying temperature and duration of treatment. Hydrogen plasma exposure at for 30 min was found to result in the improvement in the radiative efficiency of the Ge quantum...

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Bibliographic Details
Published inSemiconductor science and technology Vol. 29; no. 8; pp. 85011 - 85014
Main Authors Yakimov, A I, Kirienko, V V, Armbrister, V A, Dvurechenskii, A V
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.08.2014
Subjects
hydrogen passivation
photoluminescence
quantum dots
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Summary:We studied the effect of hydrogen plasma treatment on room-temperature photoluminescence of self-assembled Ge/Si quantum dots by varying temperature and duration of treatment. Hydrogen plasma exposure at for 30 min was found to result in the improvement in the radiative efficiency of the Ge quantum dots by one order of magnitude. The enhancement of the photoluminescence intensity is thought to be due to the passivation of nonradiative centers located nearby or inside the dots via formation of Si-H bonds. Infrared absorption spectroscopy was used to correlate photoluminescence results.
ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/29/8/085011