A circuit model simulation for separate absorption, grading, charge, and multiplication avalanche photodiodes

We obtain a transfer function and a circuit model for separate absorption, grading, charge, and multiplication avalanche photodiodes (SAGCM-APD’s). This model is used to calculate the frequency and time responses of the APD’s, and to investigate the influence of the carrier velocities and dead-space...

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Bibliographic Details
Published inSolid-state electronics Vol. 49; no. 6; pp. 871 - 877
Main Authors Banoushi, A., Kardan, M.R., Ataee Naeini, M.
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Ltd 01.06.2005
Elsevier Science
Subjects
Applied sciences
Avalanche photodiode
Circuit modeling
Electronics
Exact sciences and technology
Frequency response
Optoelectronic devices
Photodiode
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transfer function
Circuit modeling
Optoelectronic devices
Frequency response
Photodiode
Transfer function
Avalanche photodiode
Performance evaluation
Circuit simulation
Dead space
Modeling
Time response
Avalanche photodiodes
Optoelectronic device
Impact ionization
Passband
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Summary:We obtain a transfer function and a circuit model for separate absorption, grading, charge, and multiplication avalanche photodiodes (SAGCM-APD’s). This model is used to calculate the frequency and time responses of the APD’s, and to investigate the influence of the carrier velocities and dead-space effect on the bandwidth of the devices. It is shown that for thinner APD’s, the dead-space effect can be included by considering a non-local model for carrier velocities, and a local model for impact ionization rates. The new approach is easier than the previous methods, and the calculated results are in good agreement with experimental data.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2005.03.014