Thermally activated resonance tunneling in asymmetric systems of CdSe/ZnSe double quantum wells with self-assembled quantum dots

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 48; no. 3; pp. 332 - 337
• Main Authors: Reznitsky, A. N., Klochikhin, A. A., Eremenko, M. V.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01.03.2014; Springer
• Subjects: Low-Dimensional Systems; Magnetic Materials; Magnetism; Monomolecular films; Photoluminescence; Physics; Physics and Astronomy; Quantum Phenomena; Quantum wells; Semiconductor Structures; Excitation Power Density; Integrate Emission Intensity; Optical Phonon Energy; ZnSe; Barrier Thickness
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782614030221

In the luminescence study of double quantum wells formed by depositing two CdSe layers with different nominal thicknesses into a ZnSe matrix, a heavy dependence of the photoluminescence spectrum on the thickness of the ZnSe barrier separating the quantum wells, the excitation photon energy, and temperature is observed. The photoluminescence spectra are studied at barrier widths of 34, 50, and 63 monolayers, excitation photon energies of 3.06, 2.71, and 2.54 eV, and temperatures T in the range of 5–200 K. Upon above- (3.06 eV) and below-barrier (2.71 eV) excitation, the photoluminescence spectrum exhibits two bands, I 1 ( T ) and I 2 ( T ), corresponding to the annihilation of excitons localized in the quantum dots of the shallow and deep quantum wells. An increase in temperature to ∼50 K yields only a slight decrease in the total integrated emission intensity of both bands I PL ( T ) and the intensities of each of the two bands, I 1 ( T ) and I 2 ( T ). A further increase in temperature results in substantial redistribution of the photoluminescence intensity between the two wells, which is attributed to the tunneling of excitons from the QD (quantum-dot) states of the shallow well to states of the deep well. This process is of the activation character and manifests itself as a sharp decrease in the integrated emission intensity related to the shallow quantum well, I 1 ( T ), and a simultaneous increase in the integrated emission intensity of quantum dots of the deep quantum well, I 2 ( T ). The experimentally detected effect is most profound in the range of temperatures T = 110–130 K and in the samples with a barrier thickness of 50 monolayers. It is most likely that the tunneling is of a resonance nature. This inference follows from the fact that the barrier width is much larger than the well widths for both wells, which predetermines only slight penetration of the wave functions into the neighboring well, and the effect of tunneling itself is only slightly supressed, as the barrier thickness is increased. At the same time, the activation energy is at least three time higher that the optical phonon energy, which cannot be explained on the basis of existing theory.