Room temperature electrical characteristics of gold-hyperdoped silicon

Hyperdoped silicon is a promising material for near-infrared light detection, but to date, the device efficiency has been limited. To optimize photodetectors based on this material that operate at room temperature, we present a detailed study on the electrical nature of gold-hyperdoped silicon forme...

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Bibliographic Details
Published inJournal of applied physics Vol. 135; no. 9
Main Authors Lim, Shao Qi, Warrender, Jeffrey M., Notthoff, Christian, Ratcliff, Thomas, Williams, Jim S., Johnson, Brett C.
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 07.03.2024
Subjects
Gold
Hall effect
Ion implantation
Laser beam melting
Photometers
Pulsed lasers
Room temperature
Silicon
Surface layers
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Summary:Hyperdoped silicon is a promising material for near-infrared light detection, but to date, the device efficiency has been limited. To optimize photodetectors based on this material that operate at room temperature, we present a detailed study on the electrical nature of gold-hyperdoped silicon formed via ion implantation and pulsed-laser melting (PLM). After PLM processing, oxygen-rich and gold-rich surface layers were identified and a wet etch process was developed to remove them. Resistivity and Hall effect measurements were performed at various stages of device processing. The underlying gold-hyperdoped silicon was found to be semi-insulating, regardless of whether the surface gold was removed by etching or not. We propose a Fermi level pinning model to describe the band bending of the transformed surface layer and propose a promising device architecture for efficient Au-hyperdoped Si photodetectors.
ISSN:0021-8979
1089-7550
DOI:10.1063/5.0196985