Photoelectric and photovoltaic properties of structures based on mesoporous silicon passivated with iron

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 48; no. 10; pp. 1370 - 1373
• Main Authors: Bilenko, D. I., Galushka, V. V., Zharkova, E. A., Mysenko, I. B., Terin, D. V., Khasina, E. I.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01.10.2014; Springer
• Subjects: Magnetic Materials; Magnetism; Physics; Physics and Astronomy; Physics of Semiconductor Devices; Silicon; Solar energy industry; Incident Power; Photovoltaic Property; Porous Silicon; Barrier Type; Charge Transport Mechanism
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782614100042

The photoelectric and photovoltaic properties of structures based on mesoporous silicon passivated with iron (SiMP:Fe) are studied. It is shown that these properties ambiguously depend on the iron concentration. In the case of a sample with space-charge-limited currents (SCLCs), the charge-transport mechanism in the Al-SiMP:Fe- p -Si-Al heterostructure changes under illumination from the SCLC type to the barrier type. Passivation with 0.1–0.2 at % iron stabilizes not only the electrical, but also the photoelectric and photovoltaic properties of the structures. A further increase in the Fe concentration gives rise to new traps caused by the appearance of iron and silicon oxides, which leads to instability of the properties. The structures exhibit high sensitivity under low-level illumination. The open-circuit voltage is 16 mV under AM-1 irradiation (∼2 mW/cm 2 ).