Recrystallization of CdTe film under conditions of high temperature and mechanical pressure

• Published in: Thin solid films Vol. 516; no. 20; pp. 7041 - 7045
• Main Authors: Mikli, V., Hiie, J., Viljus, M., Nisumaa, R., Traksamaa, R., Kallavus, U.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 30.08.2008; Elsevier Science
• Subjects: CdTe; Composition and phase identification; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Contact resistance, contact potential; Cross-disciplinary physics: materials science; rheology; Dynamic recrystallization; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in interface structures; Exact sciences and technology; Materials science; Other semiconductors; Physics; Specific materials; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Temperature gradient; Thin film; Thin film structure and morphology; Dynamic recrystallization; CdTe; Thin film; Temperature gradient; Cubic lattices; Phase composition; Temperature gradients; Experimental device; Layer thickness; Molybdenum; Heat treatments; Thin films; II-VI semiconductors; Cadmium tellurides; Recrystallization; Ohmic contacts
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2007.12.072

A new method, experimental device and technology for large-grained CdTe film preparation are described. This method enabled to produce CdTe films with the thickness of 1–2 µm and more. Films were recrystallized on the top of 100 µm thick Mo plate and Mo/glass substrate. Phase composition of the CdTe film remained stable up to 800 °C of heating plate temperature. Due to the temperature gradient on the recrystallization area, the CdTe film stuck on the upper, low-temperature (400 °C) surface of the substrate, and an ohmic linear contact between the Mo and CdTe was achieved. Independently, face centered cubic form and large-grained CdTe film with preferable orientation (111) was formed.