A poly-Si AMOLED display with high uniformity

• Published in: Solid-state electronics Vol. 52; no. 11; pp. 1691 - 1693
• Main Authors: Park, KeeChan, Jeon, Jae-Hong, Kim, YoungIl, Choi, Jae Beom, Chang, Young-Jin, Zhan, ZhiFeng, Kim, ChiWoo
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier Ltd 01.11.2008; Elsevier
• Subjects: AMOLED (active-matrix organic light-emitting diode); Applied sciences; Contrast ratio; Display; Electronics; Exact sciences and technology; Optoelectronic devices; Poly-Si (polycrystalline silicon); Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; TFT (thin film transistor); Transistors; Uniformity; Voltage drop; Contrast ratio; Poly-Si (polycrystalline silicon); TFT (thin film transistor); Voltage drop; AMOLED (active-matrix organic light-emitting diode); Uniformity; Voltage threshold; Mass production; Polycrystal; LED displays; Matrix display; Contrast; Back surface; Active matrix; Organic light emitting diodes; Optoelectronic device; Silicon; Thin film transistor; Organic electronics
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2008.07.014

An active-matrix organic light-emitting diode (AMOLED) display based on the polycrystalline silicon backplane technology has been fabricated that employs a new pixel circuit to compensate for the variation in the threshold voltage of the thin film transistors (TFT). The new pixel circuit also copes with the voltage drop in the supply line and a very high contrast ratio can be achieved. The uniformity of the new AMOLED display is remarkably improved compared with the basic two-TFT pixel structure, and it can be readily applied in the mass production of commercial AMOLED displays.