Characterization and Modeling of Graphene Transistor Low-Frequency Noise

• Published in: IEEE transactions on electron devices Vol. 59; no. 2; pp. 516 - 519
• Main Authors: Grandchamp, B., Fregonese, S., Majek, C., Hainaut, C., Maneux, C., Meng, N., Happy, H., Zimmer, T.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.02.2012; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Compact model; Current measurement; Electrical engineering. Electrical power engineering; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics; Electronics; Engineering Sciences; Exact sciences and technology; graphene; Low-frequency noise; Micro and nanotechnologies; Microelectronics; Noise level; Noise measurement; Performance evaluation; Power electronics, power supplies; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; simulation program with integrated circuit emphasis (SPICE); transistor; Transistors; Current source; Compact design; Power electronics; 1/f noise; Noise measurement; Modeling; Noise level; low-frequency noise; Field effect transistor; Silicon carbide; Noise source; Graphene; Drain current; SPICE; Zero band gap semiconductors; Compact model; Comparative study; transistor; simulation program with integrated circuit emphasis (SPICE); graphene
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2011.2175930

This brief presents low-frequency noise measurements on a graphene field-effect transistor with graphene layer decomposed from SiC substrate. The measurements indicate the predominance of flicker noise in the current noise source measured between drain and source with quadratic dependence with a drain current. The noise level is inversely proportional to the channel area indicating the location of the main noise source to be in graphene layer. From these measurements, the main noise sources, including the main flicker noise and the Johnson noise contributions, have been introduced in a compact model. This compact model has been built using dc characterization results. Finally, the noise compact model has been validated through comparison to noise measurement.