Hydrogen silsesquioxane electron beam lithography for ultra-small single electron transistors in silicon on insulator

• Published in: Microelectronic engineering Vol. 87; no. 5; pp. 1643 - 1645
• Main Authors: Daves, W., Ruoff, M., Fleischer, M., Wharam, D.A., Kern, D.P.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.05.2010; Elsevier
• Subjects: Applied sciences; Cross-disciplinary physics: materials science; rheology; Electronics; Exact sciences and technology; HSQ; Materials science; Microelectronic fabrication (materials and surfaces technology); Molecular electronics, nanoelectronics; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; SET; SOI; Surface treatments; Transistors; SOI; SET; HSQ; Silsesquioxane polymer; Electron beam lithography; Doping; Doped materials; Negative resist; Nanoelectronics; Silicon on insulator technology; Molecular electronics; Microelectronic fabrication; Reactive ion etching; Silicon; Coulomb blockade; Room temperature; Single electron transistors
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2009.10.022

A process for the fabrication of ultra-small silicon single electron transistors with 10 nm constrictions and 40 nm island diameters based on electron beam lithography with hydrogen silsesquioxane negative resist and reactive ion etching of a thin silicon on insulator device layer is presented. The observed Coulomb blockade at room temperature indicates that even at this size small dopant clusters are formed in highly doped material and act as effective islands in a multi-junction device.