Electrical and photoelectric properties of n-CdO-p-InSe anisotype heterojunctions

Anisotype n -CdO- p -InSe heterojunctions are for the first time fabricated on the basis of layered InSe crystals. The temperature dependences of the current-voltage characteristics of the heterojunctions are studied and the mechanisms of charge transport across the barrier under forward and reverse...

Full description

Saved in:
Bibliographic Details
Published inSemiconductors (Woodbury, N.Y.) Vol. 47; no. 7; pp. 943 - 946
Main Authors Katerynchuk, V. N., Kudrynskyi, Z. R., Khomyak, V. V., Orletsky, I. G., Netyaga, V. V.
Format Journal Article
LanguageEnglish
Published Boston Springer US 01.07.2013
Springer
Subjects
Low-Dimensional Systems
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Quantum Phenomena
Semiconductor Structures
Space Charge Region
Versus Characteristic
Reverse Bias
Space Charge Limited Current
Photoelectric Property
Online AccessGet full text

Cover

More Information
Summary:Anisotype n -CdO- p -InSe heterojunctions are for the first time fabricated on the basis of layered InSe crystals. The temperature dependences of the current-voltage characteristics of the heterojunctions are studied and the mechanisms of charge transport across the barrier under forward and reverse biases are determined. The spectral range of photosensitivity of the heterojunctions is determined.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782613070099