Room temperature ferromagnetism in Zn–Mn–O

• Published in: Solid state communications Vol. 141; no. 12; pp. 641 - 644
• Main Authors: Milivojević, D., Blanuša, J., Spasojević, V., Kusigerski, V., Babić-Stojić, B.
• Format: Journal Article
• Language: English
• Published: Oxford Elsevier Ltd 01.03.2007; Elsevier
• Subjects: A. Magnetic semiconductors; A. Zn–Mn–O; Condensed matter: electronic structure, electrical, magnetic, and optical properties; D. Room temperature ferromagnetism; Electron paramagnetic resonance and relaxation; Exact sciences and technology; Magnetic properties and materials; Magnetic resonances and relaxations in condensed matter, mössbauer effect; Magnetic semiconductors; Physics; Studies of specific magnetic materials; D. Room temperature ferromagnetism; 75.50.Pp; A. Zn–Mn–O; A. Magnetic semiconductors; Impurity density; Manganese additions; XRD; Magnetic semiconductors; Zinc oxides; A. Magnetic semiconductors; A. Zn-Mn-O; D. Room temperature ferromagnetism; Sintering; Solid state reaction; Wurtzite structure; Ferromagnetism; Electron paramagnetic resonance; Saturation magnetization
• ISSN: 0038-1098; 1879-2766
• DOI: 10.1016/j.ssc.2007.01.019

Zn–Mn–O semiconductor crystallites with nominal manganese concentration x = 0.01 , 0.04 and 0.10 were synthesized by a solid state reaction method using oxalate precursors. A sintering procedure was carried out in air at 500 and 900   ∘C. The samples were investigated by X-ray diffraction, magnetization measurements and electron paramagnetic resonance. X-ray diffraction spectra reveal that the dominant crystal phase in the Zn–Mn–O system corresponds to the wurtzite structure of ZnO. Room temperature ferromagnetism is observed in Zn–Mn–O samples with manganese concentrations x = 0.01 and 0.04 sintered at low temperature (500   ∘C). Saturation magnetization in the x = 0.01 sample is found to be 0.03 μ B / Mn at T = 300 K . The ferromagnetic phase seems to be developed by Zn diffusion into Mn-oxide grains.