Perspectives of chlorine doping of ZnO

• Published in: Thin solid films Vol. 515; no. 24; pp. 8744 - 8747
• Main Authors: Tchelidze, T., Chikoidze, E., Gorochov, O., Galtier, P.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 15.10.2007; Elsevier Science
• Subjects: Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Defects and impurities: doping, implantation, distribution, concentration, etc; Exact sciences and technology; II–VI semiconductors; Materials science; Other semiconductors; Physics; Specific materials; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thermodynamics; Thin film structure and morphology; ZnO; Thermodynamics; II–VI semiconductors; ZnO; Defect density; Chlorine additions; Chlorine; Chemical method; Doping; Chemical reactions; Free carrier; Zinc oxides; Partial pressure; II-VI semiconductors; Charge carrier generation; Thermodynamic analysis; Gas phase; Carrier density
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2007.04.003

Thermodynamic analysis for system ZnO:Cl is performed by means of Kröger method of quasi-chemical reactions. We obtained equilibrium concentrations of defects and free carriers as a function of partial pressure of components in gas phase. When Chlorine total concentration of incorporated Chlorine is 10 20 cm − 3 expected concentration of carriers generated is about 5 10 19 cm − 3 , which is almost three orders of magnitude higher than the one of pure ZnO.