Low-voltage all-inorganic perovskite quantum dot transistor memory

• Published in: Applied physics letters Vol. 112; no. 21
• Main Authors: Chen, Zhiliang, Zhang, Yating, Zhang, Heng, Yu, Yu, Song, Xiaoxian, Zhang, Haiting, Cao, Mingxuan, Che, Yongli, Jin, Lufan, Li, Yifan, Li, Qingyan, Dai, Haitao, Yang, Junbo, Yao, Jianquan
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 21.05.2018
• Subjects: Applied physics; Bipolarity; Cesium; Endurance; Flash memory (computers); Gold; Low voltage; Memory devices; Perovskites; Quantum dots; Threshold voltage; Transistors; Windows (intervals)

An all-inorganic cesium lead halide quantum dot (QD) based Au nanoparticle (NP) floating-gate memory with a solution processed layer-by-layer method is demonstrated. Easy synthesis at room temperature and excellent stability make all-inorganic CsPbBr3 perovskite QDs suitable as a semiconductor layer...