Low-voltage all-inorganic perovskite quantum dot transistor memory

• Published in: Applied physics letters Vol. 112; no. 21
• Main Authors: Chen, Zhiliang, Zhang, Yating, Zhang, Heng, Yu, Yu, Song, Xiaoxian, Zhang, Haiting, Cao, Mingxuan, Che, Yongli, Jin, Lufan, Li, Yifan, Li, Qingyan, Dai, Haitao, Yang, Junbo, Yao, Jianquan
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 21.05.2018
• Subjects: Applied physics; Bipolarity; Cesium; Endurance; Flash memory (computers); Gold; Low voltage; Memory devices; Perovskites; Quantum dots; Threshold voltage; Transistors; Windows (intervals)
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.5028474

An all-inorganic cesium lead halide quantum dot (QD) based Au nanoparticle (NP) floating-gate memory with a solution processed layer-by-layer method is demonstrated. Easy synthesis at room temperature and excellent stability make all-inorganic CsPbBr3 perovskite QDs suitable as a semiconductor layer in low voltage nonvolatile transistor memory. The bipolarity of QDs has both electrons and holes stored in the Au NP floating gate, resulting in bidirectional shifts of initial threshold voltage according to the applied programing and erasing pulses. Under low operation voltage (±5 V), the memory achieved a great memory window (∼2.4 V), long retention time (>105 s), and stable endurance properties after 200 cycles. So the proposed memory device based on CsPbBr3 perovskite QDs has a great potential in the flash memory market.