Preparation and Properties of Diluted Magnetic Semiconductors GaMnAs by Low-Temperature Molecular Epitaxy

GaMnAs films are prepared by low-temperature molecular beam epitaxy. Based on the experimental results, the influence of growth and annealing conditions on the physical properties and defect configurations is discussed. In particular, the major compensating defects, such as As antisite (As sub(Ga))...

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Published inChinese physics letters Vol. 28; no. 9; pp. 097101 - 1-097101-4
Main Authors Ji, Chang-Jian (长建 姬), Zhang, Cheng-Qiang (成强 张), Zhao, Gang (刚赵), Wang, Wen-Jing (文静 王), Sun, Gang (刚孙), Yuan, Hui-Min (慧敏 袁), Han, Qi-Feng (奇峰 韩)
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.09.2011
Subjects
Annealing
Curie temperature
Defect annealing
Ferromagnetism
Interstitials
Magnetic properties
Molecular structure
Tantalum
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Summary:GaMnAs films are prepared by low-temperature molecular beam epitaxy. Based on the experimental results, the influence of growth and annealing conditions on the physical properties and defect configurations is discussed. In particular, the major compensating defects, such as As antisite (As sub(Ga)) and Mn interstitials (Mn sub(I) are studied in detail. Thereby, the relationship between structure and magnetic properties is given. It is indicated that a higher annealing temperattire can remove Mn sub(I) out of the GaMnAs lattices so as to raise the Curie temperature T sub(C) Meticulous optimization of growth techniques (Tds= 230[degrees]C, As sub(2): Ga = 5/1 and Ta = 250[degrees]C) leads to reproducible phrsical properties and ferromagnetic transition temperatures well above 148 K.
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ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/28/9/097101