Direct observation of room-temperature high-level triplet–triplet annihilation process in 1%rubrene-doped OLEDs with a CzDBA sensitizer
Using the magneto-electroluminescence as a sensitive and fingerprint probing tool, a “hot exciton” channel, named the high-level triplet–triplet annihilation (HL-TTA or T2T2A, T2 + T2 → Sn → S1 → S0 + hv) process from the high-lying triplet (T2) to the lowest singlet states, is observed in 1%rubrene...
Saved in:
Published in | Applied physics letters Vol. 124; no. 12 |
---|---|
Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Melville
American Institute of Physics
18.03.2024
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | Using the magneto-electroluminescence as a sensitive and fingerprint probing tool, a “hot exciton” channel, named the high-level triplet–triplet annihilation (HL-TTA or T2T2A, T2 + T2 → Sn → S1 → S0 + hv) process from the high-lying triplet (T2) to the lowest singlet states, is observed in 1%rubrene-doped organic light-emitting diodes with a thermally activated delayed fluorescence sensitizer of 9,10-bis(4-(9H-carbazol-9-yl)-2,6-dimethylphenyl)-9,10-diboraanthracene (CzDBA) at room temperature. The addition of a sensitizer simultaneously promotes the Dexter energy transfer channels of host-sensitizer and sensitizer-guest triplets, thereby increasing the amounts of T2 states and inducing the occurrence of the HL-TTA process. Additionally, the HL-TTA enhances with the increase in the bias current and decreases with lowering the working temperature, which is consistent with the current dependence of the conventional low-level TTA (T1T1A, T1 + T1 → S1 + S0) process but contrary to its temperature dependence. More interestingly, the high concentration of CzDBA induces the H-type aggregation of rubrene molecules, promoting the singlet fission process but suppressing the HL-TTA process. These findings enrich the physical understanding of hot exciton channels and provide ideas for the preparation of high-performance devices. |
---|---|
Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 |
ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/5.0185064 |