Electron valence-band tunnelling excess noise in twin-gate silicon-on-insulator MOSFETs

The impact of using a twin-gate (TG) configuration on the Electron Valence-Band (EVB) tunnelling-related floating-body effects has been studied in partially depleted (PD) SOI MOSFETs belonging to a 0.13 μm CMOS technology. In particular, the influence on the so-called linear kink effects (LKEs), inc...

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Bibliographic Details
Published inSolid-state electronics Vol. 50; no. 1; pp. 52 - 57
Main Authors Simoen, E., Claeys, C., Lukyanchikova, N., Garbar, N., Smolanka, A., Ghedini Der Agopian, P., Martino, J.A.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Oxford Elsevier Ltd 2006
Elsevier Science
Subjects
Applied sciences
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Floating-body effects
Integrated circuits
Low-frequency noise
Partially depleted SOI
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Twin-gate
Partially depleted SOI
Floating-body effects
Low-frequency noise
Twin-gate
MOSFET
Depletion layer
Tunnel effect
Two dimensional model
Palladium
1/f noise
Valence band
Switching
Silicon on insulator technology
Complementary MOS technology
Single transistor circuit
Numerical simulation
Impact ionization
Floating body
Transconductance
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Summary:The impact of using a twin-gate (TG) configuration on the Electron Valence-Band (EVB) tunnelling-related floating-body effects has been studied in partially depleted (PD) SOI MOSFETs belonging to a 0.13 μm CMOS technology. In particular, the influence on the so-called linear kink effects (LKEs), including the second peak in the linear transconductance ( g m) and the associated Lorentzian noise overshoot was investigated. It is shown that while there is a modest reduction of the second g m peak, the noise overshoot may be reduced by a factor of 2. At the same time, little asymmetry is observed when switching the role of the slave and the master transistor, in contrast to the case of the impact ionization related kink effects. Two-dimensional numerical simulations support the observations and show that both the g m, the second g m peak and the body potential are changed in the TG structure compared with a single transistor.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2005.10.038