Specific features of switch-on processes in high-voltage (18 kV class) optically triggered 4H-SiC thyristors

• Published in: Semiconductor science and technology Vol. 29; no. 5; pp. 55005 - 55009
• Main Authors: Mnatsakanov, T T, Yurkov, S N, Levinshtein, M E, Cheng, L, Palmour, J W
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.05.2014
• Subjects: optical triggering; power devices; silicon carbide; thyristors
• ISSN: 0268-1242; 1361-6641
• DOI: 10.1088/0268-1242/29/5/055005

A computer simulation has been carried out to analyze and explain the specific features of the switch-on process in super-high-voltage (18 kV class) optically triggered 4H-SiC thyristors. It is shown that the previously experimentally observed two-stage character of the switch-on processes can be understood in a one-dimensional approach. The two-stage turn-on of the 18 kV structures is accounted for by the rather slow current rise in the structure with a very wide (160 µm) blocking base. In full agreement with the experimental results, a simulation in the frame of the same approximations demonstrated that, in the 12 kV class thyristor structures with a blocking base thickness of 90 µm, the current increases monotonically during the switch-on process.