Effect of internal strain fields on the controllability of nanodimensional ferroelectric films in a plane capacitor

Nanodimensional ferroelectric heteroepitaxial Ba 0.8 Sr 0.2 TiO 3 films grown by the layer-by-layer mechanism on MgO(100) substrates are examined by the X-ray diffraction and transmission electron microscopy methods. It is established that, when the thickness of the film changes, the stress relaxati...

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Bibliographic Details
Published inTechnical physics Vol. 55; no. 3; pp. 395 - 399
Main Authors Mukhortov, V. M., Golovko, Yu. I., Mamatov, A. A., Zhigalina, O. M., Kuskova, A. N., Chuvilin, A. L.
Format Journal Article
LanguageEnglish
Published Dordrecht SP MAIK Nauka/Interperiodica 01.03.2010
Springer
Subjects
Capacitors
Classical and Continuum Physics
Electronic components industry
Physics
Physics and Astronomy
Solid State Electronics
High Resolution Electron Microscopy
Barium Strontium Titanate
Thick Film
Misfit Dislocation
Plane Capacitor
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Summary:Nanodimensional ferroelectric heteroepitaxial Ba 0.8 Sr 0.2 TiO 3 films grown by the layer-by-layer mechanism on MgO(100) substrates are examined by the X-ray diffraction and transmission electron microscopy methods. It is established that, when the thickness of the film changes, the stress relaxation proceeds via generation of misfit dislocations at the film-substrate interface. There exists a critical thickness (≈40 nm) of the film below and above which the film possesses tensile and compression stresses, respectively. Examples of how the stresses influence the insulating properties of the films are given.
ISSN:1063-7842
1090-6525
DOI:10.1134/S1063784210030102