Electronic properties of AB-stacked nanographite ribbons in an electric field

In the presence of transverse (ky‐direction) electric field, the low‐energy electronic properties of the AB‐stacked multilayered nanographite ribbons are studied through the tight‐binding model. The interlayer interactions significantly affect density of states (DOS), energy gap (Eg), band structure...

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Bibliographic Details
Published inPhysica status solidi. C Vol. 4; no. 2; pp. 540 - 543
Main Author Huang, Yuan-Cheng
Format Journal Article
LanguageEnglish
Published Berlin WILEY-VCH Verlag 01.02.2007
WILEY‐VCH Verlag
Subjects
73.20.At
73.21.Ac
73.22.−f
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Summary:In the presence of transverse (ky‐direction) electric field, the low‐energy electronic properties of the AB‐stacked multilayered nanographite ribbons are studied through the tight‐binding model. The interlayer interactions significantly affect density of states (DOS), energy gap (Eg), band structure. DOS exhibits many special structures, including discontinuities, and divergent peaks. The effective electric field modifies the energy dispersions, alters the subband spacing, produces the new edge state, changes the band gap, and causes the metal‐semiconductor transitions. In the metallic zigzag ribbons, the effect of electric field on band structures is completely reflected in the features of DOS, e.g., the generation of special structures, the shift of peak position, the change of peak height, and the alternation of band gap. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Bibliography:ark:/67375/WNG-WX5X9FPF-D
ArticleID:PSSC200673279
istex:F448DC6EB9EB1CAEAA17C42A6E5DB7EE2AABB76A
National Science Council of Taiwan, the Republic of China - No. NSC 93-2112-M-165-002; No. NSC 93-2112-M-145-001
ISSN:1862-6351
1610-1642
DOI:10.1002/pssc.200673279