Growth behavior of CuPc films by physical vapor deposition

• Published in: Crystal research and technology (1979) Vol. 46; no. 3; pp. 295 - 299
• Main Authors: Chiu, Yu-Chian, Chen, Bing-Hong, Jan, Da-Jeng, Tang, Shiow-Jing, Chiu, Kuan-Cheng
• Format: Journal Article
• Language: English
• Published: Berlin WILEY-VCH Verlag 01.03.2011; WILEY‐VCH Verlag
• Subjects: CuPc films; growth behaviors; organic molecular solid films; physical vapor deposition
• ISSN: 0232-1300; 1521-4079
• DOI: 10.1002/crat.201000683

Various Cu‐phthalocyanine (CuPc) films were grown from physical vapor deposition on top of indium‐tin‐oxide glass substrates by controlling substrate temperature (Tsub), source temperature (Tsou), and growth time. From side‐view SEM pictures, the growth rates for these CuPc films are estimated and can be categorized into three regions. From the Arrhenius plot of growth rate versus 1/Tsub, the activation energy EA can be obtained. As Tsou = 390 °C, for region (A) with Tsub < 140 °C, the growth of CuPc films is dominated by the adhesion process with EA = 810 meV. For region (B) with 140 °C < Tsub < 320 °C, the growth is then limited by the steric character associated with the organic molecular solids with EA = 740 meV. For region (C) with Tsub > 320 °C, the re‐evaporation of the CuPc adhered molecules from the interface becomes dominant. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)