Measurement of GaN/Ge(001) Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy

X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) at the GaN/Ge heterostructure interface. The VBO is directly determined to be 1.13 plus or minus 0.19 eV, according to the relationship between the conduction band offset Delta *DEC and the valence band offset De...

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Bibliographic Details
Published inChinese physics letters Vol. 27; no. 6; p. 067302
Main Authors Yan, Guo, Xiang-Lin, Liu, Hua-Ping, Song, An-Li, Yang, Gao-Lin, Zheng, Hong-Yuan, Wei, Shao-Yan, Yang, Qin-Sheng, Zhu, Zhan-Guo, Wang
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.06.2010
Subjects
Conduction band
Gallium nitrides
Germanium
Heterojunctions
Offsets
Photoelectron spectroscopy
Valence band
X-rays
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Summary:X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) at the GaN/Ge heterostructure interface. The VBO is directly determined to be 1.13 plus or minus 0.19 eV, according to the relationship between the conduction band offset Delta *DEC and the valence band offset Delta *DEV: Delta *DEC = E9Gan -- E9Ge -- Delta *DEV, and taking the room-temperature band-gaps as 3.4 and 0.67 eV for GaN and Ge, respectively. The conduction band offset is deduced to be 1.6 plus or minus 0.19 eV, which indicates a type-I band alignment for GaN/Ge. Accurate determination of the valence and conduction band offsets is important for the use of GaN/Ge based devices.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/27/6/067302