Origin of Subthreshold Swing Improvement in Amorphous Indium Gallium Zinc Oxide Transistors

The effect of the channel deposition pressure on the device performance of amorphous indium-gallium-zinc oxide (a-IGZO) transistors was investigated. The performance of the fabricated transistors improved monotonously with decreasing chamber pressure at a pressure of 1 mTorr. The field-effect mobili...

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Published inElectrochemical and solid-state letters Vol. 11; no. 6; pp. H157 - H159
Main Authors Jeong, Jong Han, Yang, Hui Won, Park, Jin-Seong, Jeong, Jae Kyeong, Mo, Yeon-Gon, Kim, Hye Dong, Song, Jaewon, Hwang, Cheol Seong
Format Journal Article
LanguageEnglish
Published 2008
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Summary:The effect of the channel deposition pressure on the device performance of amorphous indium-gallium-zinc oxide (a-IGZO) transistors was investigated. The performance of the fabricated transistors improved monotonously with decreasing chamber pressure at a pressure of 1 mTorr. The field-effect mobility and subthreshold gate swing of the a-IGZO thin-film transistors were dramatically improved to 21.8 cm2/Vs and 0.17 V/decade, respectively, compared to those (11.4 cm2/Vs and 0.87 V/decade) of reference transistors prepared at 5 mTorr. This enhancement in the subthreshold characteristics was attributed to a reduction of the bulk defects of the a-IGZO channel which might result from the greater densification of the a-IGZO films at the lower deposition pressure.
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ISSN:1099-0062
DOI:10.1149/1.2903209