Determination of Etch Rate Behavior of 4H–SiC Using Chlorine Trifluoride Gas

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 46; no. 12R; p. 7875
Main Authors Miura, Yutaka, Habuka, Hitoshi, Katsumi, Yusuke, Oda, Satoko, Fukai, Yasushi, Fukae, Katsuya, Kato, Tomohisa, Okumura, Hajime, Arai, Kazuo
Format Journal Article
LanguageEnglish
Published 01.12.2007
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.46.7875