Investigation of pulsed laser deposited crystalline PTFE thin layer with pulsed force mode AFM

Teflon thin films were prepared via pulsed laser deposition using an ArF excimer laser (λ=193 nm, FWHM=20 ns) from pressed powder pellets. The applied fluence was 6.25±0.23 J/cm2, the number of pulses was 10000, the pressure in the vacuum chamber was 2×10−5 Torr and the substrate temperature was 250...

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Bibliographic Details
Published inThin solid films Vol. 453-454; no. Complete; pp. 239 - 244
Main Authors Kresz, N, Kokavecz, J, Smausz, T, Hopp, B, Csete, M, Hild, S, Marti, O
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.04.2004
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Summary:Teflon thin films were prepared via pulsed laser deposition using an ArF excimer laser (λ=193 nm, FWHM=20 ns) from pressed powder pellets. The applied fluence was 6.25±0.23 J/cm2, the number of pulses was 10000, the pressure in the vacuum chamber was 2×10−5 Torr and the substrate temperature was 250 °C. The layers were post-annealed at temperature within the range 320–500 °C. The atomic force microscopy and pulsed force mode atomic force microscopy (PFM) investigations demonstrated that the effective surface reaches its maximum at 320 °C. At higher temperatures (360–500 °C) it decreased significantly to an approximately constant value. Measuring the local adhesion the difference between the adhesion forces at 320 and 360 °C was kept within the error range. Increasing the annealing temperatures, the adhesion force decreased over the investigated range. Post-annealing of the samples at 360 °C resulted in highly crystalline spherulites with lateral dimensions of several hundred micrometers. By optimizing the heating and cooling rate during the annealing the average dimension of spherulites increased and ringed structures were obtained. The PFM measurements showed that the adhesion force increased significantly compared to the similar samples without ringed structures.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2003.11.254