Capacitive Effects of Gate on Spin-Dependent AC Transport

From the spin-spin interaction, spin-capacitive term is defined in a similar way to the usual charge capacitive term that is due to the charge-charge interaction. The charge and spin capacitive effects between the gate and central channel region are found to play an important role in gate-controlled...

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Published inIEEE transactions on magnetics Vol. 50; no. 9; pp. 1 - 5
Main Authors Shi, Yi-Jian, Lan, Jin, Sui, Wen-Quan, Zhao, Xuean
Format Journal Article
LanguageEnglish
Published New York IEEE 01.09.2014
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Admittance
Capacitance
Channels
Charge
Charge density
Conductance
Coulomb friction
Electric potential
Elementary particle exchange interactions
Exchange
Gates
Logic gates
Magnetism
Magnetoelectronics
Reservoirs
Transport
exchange interaction
capacitive effects
spintronics
AC transport
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Summary:From the spin-spin interaction, spin-capacitive term is defined in a similar way to the usual charge capacitive term that is due to the charge-charge interaction. The charge and spin capacitive effects between the gate and central channel region are found to play an important role in gate-controlled spin-dependent transport systems. Both the capacitive terms affect system's charge and spin ac transport properties. The behaviors of conductance, density of states, and internal potentials demonstrate the strong involvement of charge and spin in electrons in spin-dependent transport. The purpose of this paper is to draw attention to the Coulomb and exchange interactions in spintronics devices.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.2014.2313319