A new model for the thermal oxidation kinetics of silicon
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Published in | Journal of electronic materials Vol. 17; no. 4; pp. 263 - 272 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
New York, NY
Institute of Electrical and Electronics Engineers
01.07.1988
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Subjects | |
Online Access | Get full text |
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ISSN: | 0361-5235 1543-186X |
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DOI: | 10.1007/bf02652105 |