Entirely Crack-Free Ultraviolet GaN/AlGaN Laser Diodes Grown on 2-in. Sapphire Substrate

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 46; no. 9R; p. 5782
Main Authors Yoshida, Harumasa, Takagi, Yasufumi, Kuwabara, Masakazu, Amano, Hiroshi, Kan, Hirofumi
Format Journal Article
LanguageEnglish
Published 01.09.2007
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.46.5782