Device Isolation by Plasma Treatment for Planar Integration of Enhancement/Depletion-Mode AlGaN/GaN High Electron Mobility Transistors

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 46; no. 4S; p. 2330
Main Authors Wang, Ruonan, Cai, Yong, Tang, Wilson C. W., Lau, Kei May, Chen, Kevin J.
Format Journal Article
LanguageEnglish
Published 01.04.2007
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.46.2330