Amorphous Silicon Static Induction Transistor

A hydrogenated amorphous silicon (a-Si:H) Schottky-gate static induction transistor (SIT) is proposed and its characteristics are calculated for the case that the gap-state distribution in a-Si:H is constant near the Fermi level. It is found that an a-Si:H SIT with a gate spacing of about 5 µm can y...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 24; no. 4R; p. 467
Main Authors Ueda, Masato, Hirose, Masataka, Osaka, Yukio
Format Journal Article
LanguageEnglish
Published 01.01.1985
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Summary:A hydrogenated amorphous silicon (a-Si:H) Schottky-gate static induction transistor (SIT) is proposed and its characteristics are calculated for the case that the gap-state distribution in a-Si:H is constant near the Fermi level. It is found that an a-Si:H SIT with a gate spacing of about 5 µm can yield a sufficiently high ON/OFF current ratio of more than 10 8 when the gap-state density near the Fermi level is 5×l0 15 cm -3 eV -1 . The cut-off frequency of an a-Si:H SIT is expected to exceed a few MHz.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.24.467