A 0.1-5 GHz Cryogenic SiGe MMIC LNA
In this letter, the design and measurement of the first SiGe integrated-circuit LNA specifically designed for operation at cryogenic temperatures is presented. At room temperature, the circuit provides greater than 25.8 dB of gain with an average noise temperature (T e ) of 76 K (NF = 1 dB) and S 11...
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Published in | IEEE microwave and wireless components letters Vol. 19; no. 6; pp. 407 - 409 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.06.2009
Institute of Electrical and Electronics Engineers |
Subjects | |
Online Access | Get full text |
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Summary: | In this letter, the design and measurement of the first SiGe integrated-circuit LNA specifically designed for operation at cryogenic temperatures is presented. At room temperature, the circuit provides greater than 25.8 dB of gain with an average noise temperature (T e ) of 76 K (NF = 1 dB) and S 11 of -9 dB for frequencies in the 0.1-5 GHz band. At 15 K, the amplifier has greater than 29.6 dB of gain with an average T e of 4.3 K and S 11 of -14.6 dB for frequencies in the 0.1-5 GHz range. To the authors' knowledge, this is the lowest noise ever reported for a silicon integrated circuit operating in the low microwave range and the first matched wideband cryogenic integrated circuit LNA that covers frequencies as low as 0.1 GHz. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 1531-1309 1558-1764 |
DOI: | 10.1109/LMWC.2009.2020041 |