Formation of cobalt silicide films by ion beam deposition

• Published in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 242; no. 1-2; pp. 602 - 604
• Main Authors: Zhang, Y., McCready, D.E., Wang, C.M., Young, J., McKinley, M.I., Whitlow, H.J., Razpet, A., Possnert, G., Zhang, T., Wu, Y.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.01.2006
• Subjects: Electron microscopy; Ion beam analysis; Silicide; Synthesis; 68.55.−a; Synthesis; 85.40.Ry; 68.37.−d; Silicide; Electron microscopy; Ion beam analysis
• ISSN: 0168-583X; 1872-9584
• DOI: 10.1016/j.nimb.2005.08.134

Thin films of cobalt silicide are widely used as metallization in very large-scale integrated electronic circuits. In this study, Co ions were deposited on Si(111) wafers by a high beam current filter metal vacuum arc deposition (FMEVAD) system. Surface silicide films were formed after annealing from 500 to 700°C for 30min. The results show that a thin CoSi2 surface layer with both a smooth surface topography and sharp interface can be achieved by annealing at 700°C. The CoSi phase and O contamination were observed in the samples that were annealed at lower temperatures.