Electrical Characterization of Nonvolatile Phase-Change Memory Devices Using Sb-Rich Ge–Sb–Te Alloy Films

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 46; no. 11R; p. 7225
Main Authors Yoon, Sung-Min, Choi, Kyu-Jeong, Lee, Nam-Yeal, Lee, Seung-Yun, Park, Young-Sam, Yu, Byoung-Gon
Format Journal Article
LanguageEnglish
Published 01.11.2007
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.46.7225