Local leakage current behaviours of BiFeO3 films

The leakage current behaviours of polycrystalline BiFeO3 thin films are investigated by using both conductive atomic force microscopy and current-voltage characteristic measurements. The local charge transport pathways are found to be located mainly at the grain boundaries of the films. The leakage...

Full description

Saved in:
Bibliographic Details
Published inChinese physics B Vol. 20; no. 11; pp. 493 - 498
Main Author 邹成 陈斌 朱小健 左正笏 刘宜伟 陈远富 詹清峰 李润伟
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.11.2011
Subjects
BiFeO3薄膜
Charge transport
Density
Electric potential
Grain boundaries
Illumination
Leakage current
Thin films
Voltage
原子力显微镜
同时使用
多晶硅薄膜
晶粒边界
漏电流密度
电压特性
行为
Online AccessGet full text

Cover

More Information
Summary:The leakage current behaviours of polycrystalline BiFeO3 thin films are investigated by using both conductive atomic force microscopy and current-voltage characteristic measurements. The local charge transport pathways are found to be located mainly at the grain boundaries of the films. The leakage current density can be tuned by changing the post-annealing temperature, the annealing time, the bias voltage and the light illumination, which can be used to improve the performances of the ferroelectric devices based on the BiFeOa films. A possible leakage mechanism is proposed to interpret the charge transports in the polycrystalline BiFeO3 films.
Bibliography:polycrystalline BiFeO3 thin films; local leakage current; conductive atomic force microscopy
Zou Cheng,Chen Bin,Zhu Xiao-Jian,Zuo Zheng-Hu,Liu Yi-Wei,Chen Yuan-Fu,Zhan Qing-Feng,Li Run-Wei（ a） State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China; b） Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Material Technology and Engineering Chinese Academy of Sciences, Ningbo 315201, China ;c） Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
The leakage current behaviours of polycrystalline BiFeO3 thin films are investigated by using both conductive atomic force microscopy and current-voltage characteristic measurements. The local charge transport pathways are found to be located mainly at the grain boundaries of the films. The leakage current density can be tuned by changing the post-annealing temperature, the annealing time, the bias voltage and the light illumination, which can be used to improve the performances of the ferroelectric devices based on the BiFeOa films. A possible leakage mechanism is proposed to interpret the charge transports in the polycrystalline BiFeO3 films.
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/20/11/117701