Approaches to Improve Mobility and Stability of IGZO TFTs: A Brief Review
Among metal oxide material TFTs, IGZO TFTs are highly regarded for their exceptionally high mobility, exceeding 10 cm²/V·s, remarkable transparency of more than 80%, and their adaptable low-temperature fabrication techniques. High-performance displays operating at refresh rates of up to 144 Hz and u...
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| Published in | Transactions on electrical and electronic materials Vol. 25; no. 4; pp. 371 - 379 |
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| Main Authors | , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Seoul
The Korean Institute of Electrical and Electronic Material Engineers (KIEEME)
01.08.2024
한국전기전자재료학회 |
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| Online Access | Get full text |
| ISSN | 1229-7607 2092-7592 |
| DOI | 10.1007/s42341-024-00536-1 |
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| Abstract | Among metal oxide material TFTs, IGZO TFTs are highly regarded for their exceptionally high mobility, exceeding 10 cm²/V·s, remarkable transparency of more than 80%, and their adaptable low-temperature fabrication techniques. High-performance displays operating at refresh rates of up to 144 Hz and undergoing millions of device switches demand IGZO TFTs with mobility exceeding 20 cm²/V·s and higher stability against impulse stress. The effect of IGZO material composition on device stability and recent strategies to promote the mobility and stability of IGZO TFT by modifying the transistor structure, preparation process, and post-processing techniques to reduce V
O
have been discussed. The paper describes the application of IGZO TFTs in flexible electronics.
Graphical Abstract |
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| AbstractList | Among metal oxide material TFTs, IGZO TFTs are highly regarded for their exceptionally high mobility, exceeding 10 cm²/V·s, remarkable transparency of more than 80%, and their adaptable low-temperature fabrication techniques. High-performance displays operating at refresh rates of up to 144 Hz and undergoing millions of device switches demand IGZO TFTs with mobility exceeding 20 cm²/V·s and higher stability against impulse stress. The effect of IGZO material composition on device stability and recent strategies to promote the mobility and stability of IGZO TFT by modifying the transistor structure, preparation process, and post-processing techniques to reduce V
O
have been discussed. The paper describes the application of IGZO TFTs in flexible electronics.
Graphical Abstract Among metal oxide material TFTs, IGZO TFTs are highly regarded for their exceptionally high mobility, exceeding 10 cm²/V·s, remarkable transparency of more than 80%, and their adaptable low-temperature fabrication techniques. High-performance displays operating at refresh rates of up to 144 Hz and undergoing millions of device switches demand IGZO TFTs with mobility exceeding 20 cm²/V·s and higher stability against impulse stress. The eff ect of IGZO material composition on device stability and recent strategies to promote the mobility and stability of IGZO TFT by modifying the transistor structure, preparation process, and post-processing techniques to reduce V O have been discussed. The paper describes the application of IGZO TFTs in flexible electronics. KCI Citation Count: 0 |
| Author | Chen, Jingwen Jeong, Yeojin Yi, Junsin Pan, Zhong Wang, Fucheng Pham, Duy Phong Hu, Yifan |
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| Keywords | IGZO Annealing Thin film transistor Process Oxygen vacancy Passivation layer |
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| Title | Approaches to Improve Mobility and Stability of IGZO TFTs: A Brief Review |
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