Approaches to Improve Mobility and Stability of IGZO TFTs: A Brief Review

Among metal oxide material TFTs, IGZO TFTs are highly regarded for their exceptionally high mobility, exceeding 10 cm²/V·s, remarkable transparency of more than 80%, and their adaptable low-temperature fabrication techniques. High-performance displays operating at refresh rates of up to 144 Hz and u...

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Published inTransactions on electrical and electronic materials Vol. 25; no. 4; pp. 371 - 379
Main Authors Pan, Zhong, Hu, Yifan, Chen, Jingwen, Wang, Fucheng, Jeong, Yeojin, Pham, Duy Phong, Yi, Junsin
Format Journal Article
LanguageEnglish
Published Seoul The Korean Institute of Electrical and Electronic Material Engineers (KIEEME) 01.08.2024
한국전기전자재료학회
Subjects
Chemistry and Materials Science
Electronics and Microelectronics
Instrumentation
Materials Science
Optical and Electronic Materials
Review Paper
전기공학
IGZO
Annealing
Thin film transistor
Process
Oxygen vacancy
Passivation layer
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ISSN1229-7607
2092-7592
DOI10.1007/s42341-024-00536-1

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Summary:Among metal oxide material TFTs, IGZO TFTs are highly regarded for their exceptionally high mobility, exceeding 10 cm²/V·s, remarkable transparency of more than 80%, and their adaptable low-temperature fabrication techniques. High-performance displays operating at refresh rates of up to 144 Hz and undergoing millions of device switches demand IGZO TFTs with mobility exceeding 20 cm²/V·s and higher stability against impulse stress. The effect of IGZO material composition on device stability and recent strategies to promote the mobility and stability of IGZO TFT by modifying the transistor structure, preparation process, and post-processing techniques to reduce V O have been discussed. The paper describes the application of IGZO TFTs in flexible electronics. Graphical Abstract
ISSN:1229-7607
2092-7592
DOI:10.1007/s42341-024-00536-1