Characterization of deep centers in semi-insulating SiC and HgI2: Application of discharge current transient spectroscopy

• Published in: Journal of materials science. Materials in electronics Vol. 19; no. 8-9; pp. 810 - 814
• Main Authors: Matsuura, Hideharu, Takahashi, Miyuki, Nagata, Shunji, Taniguchi, Kazuo
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Boston Springer US 01.09.2008; Springer; Springer Nature B.V
• Subjects: Applied sciences; Characterization and Evaluation of Materials; Chemistry and Materials Science; Diodes; Electronics; Exact sciences and technology; General equipment and techniques; Instruments, apparatus, components and techniques common to several branches of physics and astronomy; Materials Science; Optical and Electronic Materials; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing; Spectrum analysis; X- and γ-ray instruments and techniques; X- and γ-ray sources, mirrors, gratings and detectors; Deep Level Transient Spectroscopy; Emission Rate; HgI2; Thermally Stimulate Current; Bottom Electrode; Silicon carbide; Discharge current; Analysis method; Gamma radiation; Semiconductor materials; Thermostimulated conduction; Diode; X-ray detection; Measurement sensor; Trap; Discrete cosine transforms; Transients
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-007-9454-7

In order to characterize traps in semi-insulating 4H-SiC and HgI 2 regarded as an attractive semiconductor for X-ray detectors, we apply discharge current transient spectroscopy (DCTS), which is a graphical peak analysis method based on the transient reverse current of a diode. In high-purity semi-insulating 4H-SiC whose diode may detect X-rays or γ-rays, DCTS can detect two types of trap species, and can determine those densities and emission rates. The emission rates of detected traps are close to each other, suggesting that thermally stimulated current (TSC) may not distinguish between these two types of traps. In semi-insulating HgI 2 , the densities and emission rates of two types of trap species are also determined by DCTS. Therefore, it is demonstrated that DCTS is a powerful method for determining the densities and emission rates of traps in semi-insulating semiconductors