Effects of fluorine-based plasma treatment and thermal annealing on high-Al content AlGaN Schottky contact

Fluorine plasma treatment was used prior to the Schottky metal deposition on the undoped Al0.45Ga0.55N,which aimed at the solar-blind wavelength.After fluorine plasma treatment and before depositing the Ni/Au Schottky,the samples were thermal annealed in the N2 gas at 400 ℃.The reverse leakage curre...

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Bibliographic Details
Published inChinese physics B Vol. 25; no. 11; pp. 466 - 469
Main Author 刘芳 秦志新
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.11.2016
Subjects
plasma treatment
reverse leakage current
surface states
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Summary:Fluorine plasma treatment was used prior to the Schottky metal deposition on the undoped Al0.45Ga0.55N,which aimed at the solar-blind wavelength.After fluorine plasma treatment and before depositing the Ni/Au Schottky,the samples were thermal annealed in the N2 gas at 400 ℃.The reverse leakage current density of Al0.45Ga0.55N Schottky diode was reduced by 2 orders of magnitude at-10 V.The reverse leakage current density was reduced by 3 orders of magnitude after thermal annealing.Further capacitance-frequency analysis revealed that the fluorine-based plasma treatment reduces the surface states of AlGaN by one order of magnitude at different surface state energies.The capacitance-frequency analysis also proved that the concentration of carriers in AlGaN top is reduced through fluorine plasma treatment.
Bibliography:Schottky AlGaN fluorine annealing capacitance leakage annealed magnitude prior ultraviolet
Fluorine plasma treatment was used prior to the Schottky metal deposition on the undoped Al0.45Ga0.55N,which aimed at the solar-blind wavelength.After fluorine plasma treatment and before depositing the Ni/Au Schottky,the samples were thermal annealed in the N2 gas at 400 ℃.The reverse leakage current density of Al0.45Ga0.55N Schottky diode was reduced by 2 orders of magnitude at-10 V.The reverse leakage current density was reduced by 3 orders of magnitude after thermal annealing.Further capacitance-frequency analysis revealed that the fluorine-based plasma treatment reduces the surface states of AlGaN by one order of magnitude at different surface state energies.The capacitance-frequency analysis also proved that the concentration of carriers in AlGaN top is reduced through fluorine plasma treatment.
11-5639/O4
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/25/11/117304