Static and Dynamic Response Analysis of Raman Injection Quantum Cascade Laser Using Circuit Level Modeling

• Published in: Journal of lightwave technology Vol. 28; no. 21; pp. 3142 - 3148
• Main Authors: Yousefvand, H R, Ahmadi, V, Saghafi, K
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.11.2010; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Circuit model; Circuits; Devices; Equivalent circuits; Exact sciences and technology; Fundamental areas of phenomenology (including applications); Information, signal and communications theory; Laser excitation; Laser modes; Laser transitions; Lasers; Mathematical models; Modulation; Modulation, demodulation; nonlinear optics; Optics; Photonics; Physics; pump laser; Pump lasers; Pumps; quantum cascade laser; Quantum cascade lasers; Raman laser; Raman lasers; rate equations; Semiconductor lasers; laser diodes; Signal and communications theory; Telecommunications and information theory; Static characteristic; Output power; Threshold current; Experimental device; Modeling; Quantum cascade laser; Static model; Raman scattering; Modulation; Dynamic response; Dynamic characteristic; Raman laser; Durability; Injection laser; Quantum yield; pump laser; rate equations; nonlinear optics; Population inversion; Simulation; Rate equation; Equivalent circuit; Circuit model; Reliability; Raman lasers
• ISSN: 0733-8724; 1558-2213
• DOI: 10.1109/JLT.2010.2077731

In this paper a new approach for modeling of Raman quantum cascade lasers (QCLs) is presented which integrates electrical, optical and Raman effects. The equivalent circuit model of laser by employing simplified two-level rate equations of pump and Raman regions is developed. The total equivalent circuit is composed of pump laser circuit coupled to Raman laser circuit which models the behaviors of each component and whole device. By using the presented model the static and dynamic performances of laser for different parameters are investigated. The results of simulation show that the main characteristics of laser such as threshold current, quantum efficiency, output power and modulation response are affected by photon lifetime and variation of population inversion conditions. Static results of model agree favorably with experimental data from devices reported in the literatures.