Complex Permittivity of GaAs and CdTe at Microwave Frequencies

The microwave dielectric constant and loss tangent of Cr-doped semi-insulatiug GaAs have been measured in the frequency range 2.5-36.0 GHz and the temperature range 300-400 K. The room temperature dielectric constant is 12.95 and the temperature coefficient alpha ( /spl equiv/ epsilon(0)/sup -1/ d e...

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Bibliographic Details
Published inIEEE transactions on microwave theory and techniques Vol. 25; no. 8; pp. 697 - 701
Main Author Courtney, W.E.
Format Journal Article
LanguageEnglish
Published IEEE 01.08.1977
Subjects
Dielectric constant
Dielectric loss measurement
Dielectric measurements
Frequency measurement
Gallium arsenide
Loss measurement
Microwave frequencies
Microwave measurements
Permittivity
Temperature distribution
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Summary:The microwave dielectric constant and loss tangent of Cr-doped semi-insulatiug GaAs have been measured in the frequency range 2.5-36.0 GHz and the temperature range 300-400 K. The room temperature dielectric constant is 12.95 and the temperature coefficient alpha ( /spl equiv/ epsilon(0)/sup -1/ d epsilon/dT) is 1.6 x 10/sup -4/ /K. The dielectric constant and loss tangent of CdTe have been measured as functions of temperature at 15.95 GHz. The room temperature dielectric constant is 10.39 /spl plusmn/ 0.04 and the temperature coefficient alpha is 2.5 x 10/sup -4/ /K.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.1977.1129189