A novel hot embossing Graphene transfer process for flexible electronics

• Published in: Microelectronic engineering Vol. 209; pp. 16 - 19
• Main Authors: Ballesio, A., Parmeggiani, M., Verna, A., Frascella, F., Cocuzza, M., Pirri, C.F., Marasso, S.L.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.03.2019; Elsevier BV
• Subjects: Copolymers; CVD; Electrolytes; Electronics; Embossing; Field effect transistors; Flexible components; Flexible electronics; Foils; G-FET; Graphene; Graphene transfer; Heat transfer; Hot embossing; Polyolefins; Semiconductor devices; Substrates; CVD; G-FET; Hot embossing; Graphene; Flexible electronics; Graphene transfer
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2019.02.010

In this work a new Single Layer Graphene (SLG) transfer technique exploiting a hot embossing process was carried out. Flexible electrolyte gated Graphene Field Effect Transistors (G-FET) were fabricated and tested electrically. A polymeric transparent foil suitable for optics and flexible electronics, Cyclic Olefin Copolymer (COC) was used as flexible substrate. Raman characterization confirmed that the new Hot Embossing Graphene Transfer (HEGT) is suitable for the deposition of SLG and the fabrication of G-FETs. A Comparison with SLG common transfer method was carried out and proven for G-FETs fabrication. The HEGT devices showed typical characteristics and maintained the same performances when the substrate was bent. This demonstrated that the HEGT allows for efficient transfer of high quality SLG on large area thus providing the opportunity for the exploitation on a large scale production process for flexible substrates. [Display omitted] •Graphene can be successfully transferred on COC without polymer sacrificial layer.•G-FETs show comparable characteristics to common transfer techniques.•G-FETs are suitable for flexible electronics since they work also under bending.