Influence of ambient light on the radiation-induced attenuation of germanosilicate optical fibers in the visible and near-infrared domains

• Published in: IEEE transactions on nuclear science Vol. 70; no. 4; p. 1
• Main Authors: Campanella, Cosimo, Weninger, Luca, Morana, Adriana, Meyer, Arnaud, Mady, Franck, Benabdesselam, Mourad, Desjonqueres, Hortense, Poirier, Stephane, Monsanglant-Louvet, Celine, Marin, Emmanuel, Ouerdane, Youcef, Boukenter, Aziz, Girard, Sylvain
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.04.2023; The Institute of Electrical and Electronics Engineers, Inc. (IEEE); Institute of Electrical and Electronics Engineers
• Subjects: Absorption spectra; Ambient light effects; Attenuation; Domains; Doped fibers; Engineering Sciences; Fibers; Ge-doped silica; Germanium; I.R. radiation; Irradiation; Kinetic theory; Lighting; Optical fiber sensors; Optical fibers; Photobleaching; Photochemical reactions; Point defects; Radiation; Radiation effects; Radiation-induced attenuation; Wavelengths; X-rays; Radiation effects; Radiation-induced attenuation; Ambient light effects; Ge-doped silica; Optical Fibers
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/TNS.2022.3228099

We investigated the influence of the ambient light on the Radiation-Induced Attenuation (RIA) of Ge-doped optical fibers measured at the telecommunication wavelengths when exposed to a 60 Co source, and in the visible and Near-InfraRed (NIR) domains when exposed to X-rays. From our results, it is possible to observe that this class of optical fibers are sensitive to the ambient light. Indeed, in all cases, their RIA value changes depending on the illumination conditions. In particular, the γ-ray irradiations revealed jumps in the measured RIA when changing the lamp of the irradiation chamber, whereas the X-ray irradiations reported that the relative photobleaching effect caused by the ambient light increases with the wavelength, up to ~1300 nm. The spectral study revealed no direct correlation between the absorption bands of the known Ge-related point defects and the external photobleaching phenomenon.