Electron-hole asymmetry in the electron-phonon coupling in top-gated phosphorene transistor

Using in situ Raman scattering from phosphorene channel in an electrochemically top-gated field effect transistor, we show that phonons with Ag symmetry depend much more strongly on concentration of electrons than that of holes, wheras phonons with Bg symmetry are insensitive to doping. With first-p...

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Published in2d materials Vol. 3; no. 1; p. 15008
Main Authors Chakraborty, Biswanath, Gupta, Satyendra Nath, Singh, Anjali, Kuiri, Manabendra, Kumar, Chandan, Muthu, D V S, Das, Anindya, Waghmare, U V, Sood, A K
Format Journal Article
LanguageEnglish
Published IOP Publishing 18.02.2016
Subjects
Asymmetry
Channels
Conduction band
Constitution
Coupling
electron-phonon coupling
phonon
Phonons
phosphorene
Raman spectroscopy
Semiconductor devices
Symmetry
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Abstract Using in situ Raman scattering from phosphorene channel in an electrochemically top-gated field effect transistor, we show that phonons with Ag symmetry depend much more strongly on concentration of electrons than that of holes, wheras phonons with Bg symmetry are insensitive to doping. With first-principles theoretical analysis, we show that the observed electon-hole asymmetry arises from the radically different constitution of its conduction and valence bands involving π and bonding states respectively, whose symmetry permits coupling with only the phonons that preserve the lattice symmetry. Thus, Raman spectroscopy is a non-invasive tool for measuring electron concentration in phosphorene-based nanoelectronic devices.
AbstractList Using in situ Raman scattering from phosphorene channel in an electrochemically top-gated field effect transistor, we show that phonons with Ag symmetry depend much more strongly on concentration of electrons than that of holes, wheras phonons with Bg symmetry are insensitive to doping. With first-principles theoretical analysis, we show that the observed electon-hole asymmetry arises from the radically different constitution of its conduction and valence bands involving π and bonding states respectively, whose symmetry permits coupling with only the phonons that preserve the lattice symmetry. Thus, Raman spectroscopy is a non-invasive tool for measuring electron concentration in phosphorene-based nanoelectronic devices.
Using in situ Raman scattering from phosphorene channel in an electrochemically top-gated field effect transistor, we show that phonons with A sub(g) symmetry depend much more strongly on concentration of electrons than that of holes, wheras phonons with B sub(g) symmetry are insensitive to doping. With first-principles theoretical analysis, we show that the observed electon-hole asymmetry arises from the radically different constitution of its conduction and valence bands involving [pi] and [sigma] bonding states respectively, whose symmetry permits coupling with only the phonons that preserve the lattice symmetry. Thus, Raman spectroscopy is a non-invasive tool for measuring electron concentration in phosphorene-based nanoelectronic devices.
Author Sood, A K
Singh, Anjali
Das, Anindya
Kuiri, Manabendra
Waghmare, U V
Chakraborty, Biswanath
Gupta, Satyendra Nath
Muthu, D V S
Kumar, Chandan
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Snippet Using in situ Raman scattering from phosphorene channel in an electrochemically top-gated field effect transistor, we show that phonons with Ag symmetry depend...
Using in situ Raman scattering from phosphorene channel in an electrochemically top-gated field effect transistor, we show that phonons with A sub(g) symmetry...
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StartPage 15008
SubjectTerms Asymmetry
Channels
Conduction band
Constitution
Coupling
electron-phonon coupling
phonon
Phonons
phosphorene
Raman spectroscopy
Semiconductor devices
Symmetry
Title Electron-hole asymmetry in the electron-phonon coupling in top-gated phosphorene transistor
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