Microsystems using three-dimensional integration and TSV technologies: Fundamentals and applications
As a powerful enabling technology, three-dimensional (3D) integration, which uses wafer bonding to integrate multiple wafers in the vertical direction and uses through‑silicon-vias (TSV) to electrically connect the wafers, have greatly promoted the technological advances and market development of ME...
Saved in:
Published in | Microelectronic engineering Vol. 210; pp. 35 - 64 |
---|---|
Main Author | |
Format | Journal Article |
Language | English |
Published |
Amsterdam
Elsevier B.V
01.04.2019
Elsevier BV |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | As a powerful enabling technology, three-dimensional (3D) integration, which uses wafer bonding to integrate multiple wafers in the vertical direction and uses through‑silicon-vias (TSV) to electrically connect the wafers, have greatly promoted the technological advances and market development of MEMS in the past ten years. 3D integration enables heterogeneous integration of MEMS and IC chips fabricated with different technologies and materials, and thus permits the realization of integrated, sophisticated, and multifunctional microsystems with high performance, low cost, and compact size. This paper first introduces the fundamental fabrication technologies of 3D integration, and then reviews the recent progresses of MEMS and microsystems using 3D integration and TSV technologies. MEMS-CMOS integration, TSV-based wafer level packaging, 2.5D interposer integration of MEMS are illustrated with academic achievements and commercial products by functional categorization. Finally the conclusions are made and the future trends are discussed. © 2008 Elsevier B.V. All rights reserved.
•This paper introduces the fundamental fabrication technologies of 3D integration.•Recent advances in 3D MEMS integration, TSV wafer level packaging, 2.5D MEMS integration are reviewed.•Both academic achievements and commercial products are presented. |
---|---|
Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 |
ISSN: | 0167-9317 1873-5568 |
DOI: | 10.1016/j.mee.2019.03.009 |