Bilayer Pseudo-Spin Field Effect Transistor (BiSFET): Concepts and Critical Issues for Realization

The Bilayer pseudo-spin Field Effect Transistor (BiSET) has been proposed as one means of taking advantage of possible room temperature superfluidity in two graphene layers separated by a thin dielectric. In principle, the switching energy per device could be on the scale of 10 zJ, over two orders o...

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Bibliographic Details
Published inECS transactions Vol. 45; no. 4; pp. 3 - 14
Main Authors Register, Leonard F., Mou, X., Reddy, Dharmendar, Jung, Wooyoung, Sodemann, Inti, Pesin, Dima, Hassibi, Arjang, MacDonald, Allan H., Banerjee, Sanjay K.
Format Journal Article
LanguageEnglish
Published The Electrochemical Society, Inc 27.04.2012
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Summary:The Bilayer pseudo-spin Field Effect Transistor (BiSET) has been proposed as one means of taking advantage of possible room temperature superfluidity in two graphene layers separated by a thin dielectric. In principle, the switching energy per device could be on the scale of 10 zJ, over two orders of magnitude below estimates for "end-of the roadmap" CMOS transistors. However, achieving both the goal of room temperature superfluidity and harnessing it for low-power switching pose substantial challenges, both theoretical and experimental. In this work we review the basic graphene superfluidity and BiSFET concepts, our current understanding-and limits to that understanding-of the requirements for condensate formation, and how these requirements could impact BiSFET design.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3700447