Effects of BOX thickness, silicon thickness, and backgate bias on SCE of ET-SOI MOSFETs

In this work, we investigate the effect of BOX (Buried OXide) and silicon thickness on the SCE (Short-Channel Effects) of ET-SOI (Extremely Thin Silicon-on-Insulator) MOSFETs. It is found that the minimum channel length Lmin is only moderately sensitive to the BOX thickness but strongly dependent on...

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Bibliographic Details
Published inMicroelectronic engineering Vol. 238; p. 111506
Main Authors Su, Elizabeth Mei-hua, Hong, David Chuyang, Cristoloveanu, Sorin, Taur, Yuan
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 01.02.2021
Elsevier BV
Subjects
Bias
Effects
Estimation bias
MOSFET model
MOSFETs
Sensors
Silicon
SOI (semiconductors)
Thickness
Thickness measurement
Threshold voltage
velocity saturation
Work functions
velocity saturation
MOSFET model
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Summary:In this work, we investigate the effect of BOX (Buried OXide) and silicon thickness on the SCE (Short-Channel Effects) of ET-SOI (Extremely Thin Silicon-on-Insulator) MOSFETs. It is found that the minimum channel length Lmin is only moderately sensitive to the BOX thickness but strongly dependent on the silicon thickness. For a given threshold voltage, the choice of gate work function in combination with the backgate bias also plays a role on Lmin. Reverse bias mitigates SCE while forward bias aggravates SCE. An empirical expression of Lmin in terms of silicon thickness is given. [Display omitted] •The effect of buried oxide and silicon thickness on the Short-Channel Effects of ET-SOI MOSFETs are investigated.•Thinner silicon thickness is much more beneficial to the reduction of Lmin than thinner BOX thickness.•For a given threshold voltage, the choice of gate work function and backgate bias play a role on Lmin.•Reverse bias mitigates SCE while forward bias aggravates SCE
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2021.111506