Device component margin evaluation using generalized field interruption technique

• Published in: IEEE transactions on magnetics Vol. 12; no. 6; pp. 677 - 679
• Main Authors: Chen, T., Tocci, L., Archer, J.
• Format: Journal Article
• Language: English
• Published: IEEE 01.11.1976
• Subjects: Coils; Electromagnetic measurements; Gaussian processes; Magnetic field measurement; Magnetostatics; Probability; Pulse measurements; Semiconductor device measurement; Spirals; Temperature
• ISSN: 0018-9464; 1941-0069
• DOI: 10.1109/TMAG.1976.1059105

A generalized field interruption technique is evaluated for bubble memory chip margin analysis. Using a short bubble stream and measuring the averaged propagation steps for the first error in a given data pattern, field interruption offers a statistically significant measurement of the failure probability for a small segment of a complete bubble memory device. This technique also allows an individual component margin measurement independent of the rest of the device. A practical example is given using a 100K bit serial loop memory chip which is composed of various components and which also contains a weak processing defect. The component margin measurements show that at low driving fields the chip operation is limited by the passive replicator component, while at high driving fields operation is limited by the permalloy defect.