Fast Transient Analysis of Next-Generation Interconnects Based on Carbon Nanotubes

• Published in: IEEE transactions on electromagnetic compatibility Vol. 52; no. 2; pp. 496 - 503
• Main Authors: D'Amore, Marcello, Sarto, Maria Sabrina, Tamburrano, Alessio
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.05.2010; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Bundles; Carbon nanotube (CNT); Computational modeling; crosstalk; Electric potential; Electromagnetic compatibility; fast transient; Integrated circuit interconnections; interconnect; Mathematical model; Mathematical models; Nanostructure; Quantum capacitance; Resistance; Single wall carbon nanotubes; Time delay; Transient analysis; Voltage
• ISSN: 0018-9375; 1558-187X
• DOI: 10.1109/TEMC.2010.2045383

The scaling of copper wires and the increase in signal switching speed produce transient crosstalk coupling between interconnect lines, which causes overshoots and additional time delay. The time-domain analysis of CMOS gates driving next-generation interconnects consisting of single wall carbon nanotube (SWCNT) bundles or multiwall carbon nanotubes (MWCNTs) is carried out. Accurate simulation models of SWCNT bundles and MWCNTs are proposed in the frequency domain by using both the multiconductor transmission line (MTL) formulation and the multiequivalent single conductor (MESC) approach. The fast transient voltage responses of two coupled nanointerconnects of 14 and 22 nm technologies to a pulsed input are computed by means of both the MTL and the MESC models. The obtained results are in good agreement. The same agreement is achieved by computing the 50% time delay of the output voltages.